Reduction of dark current and unintentional background doping in InGaAsN photodetectors by ex situ annealing

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7726, Issue , 2010, Pages

  Tan, Siew Li ^a   Tan, Lionel J J ^a   Goh, Yu Ling ^a   Zhang, Shiyong ^a   Ng, Jo Shien ^a   David, John P R ^a   Marko, Igor P ^b   Allam, Jeremy ^b   Sweeney, Stephen J ^b   Adams, Alfred R ^b  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

Dilute nitride; GaInNAs; InGaAsN; photodetectors; photodiodes; thermal annealing

Indexed keywords

ANNEALED SAMPLES; AS-GROWN; BACKGROUND CONCENTRATION; CUTOFF WAVELENGTHS; DILUTE NITRIDES; EX-SITU ANNEALING; GAAS; GAINNAS; GROWN STRUCTURES; HIGH TEMPERATURE; INGAASN; LOW GROWTH TEMPERATURE; NITROGEN INCORPORATION; OPTIMAL GROWTH; PHOTOLUMINESCENCE SPECTRUM; POSTGROWTH THERMAL ANNEALING; PROMISING MATERIALS; THERMAL-ANNEALING;

CRYSTAL GROWTH; DARK CURRENTS; DETECTORS; ELECTRIC FIELDS; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OPTIMIZATION; OPTOELECTRONIC DEVICES; PHOTODETECTORS; PHOTODIODES;

ANNEALING;

EID: 77953756822     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.853912     Document Type: Conference Paper

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