Microstructure, electrical, magnetic, and extraordinary Hall effect studies in Ni: SiO2 nanogranular films synthesized by atom beam sputtering

Journal of Applied Physics

Volumn 107, Issue 11, 2010, Pages

  Kumar, Hardeep ^a   Ghosh, Santanu ^a   Bürger, Danilo ^b   Zhou, Shengqiang ^b   Kabiraj, Debdulal ^c   Avasthi, Devesh Kumar ^c   Grötzschel, Rainer ^b   Schmidt, Heidemarie ^b  

^a INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^c INTER UNIVERSITY ACCELERATOR CENTRE   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ATOM BEAMS; ELECTRICAL TRANSPORT; EXTRAORDINARY HALL EFFECT; HALL RESISTIVITY; HALL SENSOR; HOMOGENEOUS DISTRIBUTION; METAL FRACTIONS; NANOGRANULAR FILMS; NI PARTICLES; PERCOLATION THRESHOLDS; SPUTTERING TECHNIQUES; SUPERPARAMAGNETIC BEHAVIOR;

ELECTRIC PROPERTIES; FERROMAGNETIC MATERIALS; FERROMAGNETISM; GYRATORS; HALL EFFECT; HALL EFFECT TRANSDUCERS; MAGNETIC PROPERTIES; MICROSTRUCTURE; PERCOLATION (COMPUTER STORAGE); PERCOLATION (FLUIDS); PERCOLATION (SOLID STATE); SILICON COMPOUNDS; SOLVENTS; SUPERPARAMAGNETISM; TEMPERATURE MEASUREMENT;

MAGNETIC FIELD EFFECTS;

EID: 77953646924     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3410986     Document Type: Article

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