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Volumn 107, Issue 11, 2010, Pages

Crystallization of ion amorphized Ge2Sb2Te 5 thin films in presence of cubic or hexagonal phase

(10) De Bastiani, R a,b Carria, E a,b Gibilisco, S a,b Mio, A a,c Bongiorno, C c Piccinelli, F d Bettinelli, M d Pennisi, A R a,b Grimaldi, M G a,b Rimini, E a,c

a UNIVERSITY OF CATANIA (Italy)

b CNR IMM (Italy)

c CNR (Italy)

d UNIVERSITY OF VERONA (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE PHASE; CRYSTALLIZATION PROCESS; HEXAGONAL PHASE; IN-SITU TRANSMISSION; NUCLEATION SITES; RAMAN ANALYSIS; SOLID PHASE EPITAXIAL GROWTH; TIME RESOLVED REFLECTIVITY MEASUREMENTS;

AMORPHOUS FILMS; CRYSTALLINE MATERIALS; CRYSTALLIZATION KINETICS; GERMANIUM; IN SITU PROCESSING; ION IMPLANTATION; SCANNING ELECTRON MICROSCOPY; TELLURIUM COMPOUNDS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

PHASE INTERFACES;

EID: 77953628318 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3437636 Document Type: Article

Times cited : (26)

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