Improved light extraction of GaN-based light-emitting diodes with surface-textured indium tin oxide electrodes by nickel nanoparticle mask dry-etching

Chinese Physics B

Volumn 19, Issue 6, 2010, Pages

  He, An He ^a   Zhang, Yong ^a   Zhu, Xue Hui ^a   Chen, Xian Wen ^a   Fan, Guang Han ^a   He, Miao ^a  

^a SOUTH CHINA NORMAL UNIVERSITY   (China)

Author keywords

Extraction efficiency; GaN based light emitting diodes; Nickel nanoparticle; Surface roughening

Indexed keywords

ACTIVE LAYER; CURRENT SPREADING; ELECTRICAL CHARACTERISTIC; ETCHING MASKS; EXTRACTION EFFICIENCIES; GAN BASED LED; GAN-BASED LIGHT-EMITTING DIODES; INDIUM TIN OXIDE; INDIUM TIN OXIDE ELECTRODES; LIGHT EXTRACTION; LUMINANCE INTENSITY; NICKEL NANOPARTICLES; PHOTOELECTRIC CHARACTERISTICS; POTENTIAL APPLICATIONS;

DIODES; DRY ETCHING; ELECTRODES; ELECTROMAGNETIC INDUCTION; EXTRACTION; GALLIUM ALLOYS; GALLIUM NITRIDE; INDIUM; INDUCTIVELY COUPLED PLASMA; LIGHT; LIGHT EMISSION; MONOLAYERS; NANOPARTICLES; NICKEL; NICKEL ALLOYS; NICKEL OXIDE; PHOTOLITHOGRAPHY; TIN; TITANIUM COMPOUNDS;

LIGHT EMITTING DIODES;

EID: 77953565899     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/19/6/068101     Document Type: Article

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