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Applied Physics Letters

Volumn 96, Issue 22, 2010, Pages

Surface 210 nm light emission from an AlN p-n junction light-emitting diode enhanced by A-plane growth orientation

(2) Taniyasu, Yoshitaka a Kasu, Makoto a

a NTT Basic Research Laboratories (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

A-PLANE; ALN; EMISSION INTENSITY; GROWTH ORIENTATIONS; HIGHER EMISSION INTENSITY; NEGATIVE CRYSTALS; P-N JUNCTION; POLARIZATION PROPERTIES; POLARIZATION RATIOS; RADIATION PATTERNS; SURFACE NORMALS;

ELECTRIC FIELDS; LIGHT; LIGHT EMISSION; POLARIZATION; SEMICONDUCTOR JUNCTIONS;

LIGHT EMITTING DIODES;

EID: 77953560353 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3446834 Document Type: Article

Times cited : (93)

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