Formation and properties of high density Si nanodots

Applied Surface Science

Volumn 256, Issue 18, 2010, Pages 5691-5694

  Xu, Jun ^a   Chen, Guran ^a   Song, Chao ^a   Chen, Kunji ^a   Huang, Xinfan ^a   Ma, Zhongyuan ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

Laser crystallization; Light emission; Si nanodots

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS MATERIALS; DIELECTRIC MATERIALS; ELECTROLUMINESCENCE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LIGHT; LIGHT EMISSION; LUMINESCENCE; NANODOTS; SILICON NITRIDE; TRANSMISSION ELECTRON MICROSCOPY; ULTRATHIN FILMS;

CROSS-SECTION TRANSMISSION ELECTRON MICROSCOPIES; ELECTROLUMINESCENCE INTENSITY; LASER CRYSTALLIZATION; LASER-INDUCED CRYSTALLIZATION; LUMINESCENCE EFFICIENCIES; RADIATIVE RECOMBINATION; ROOM-TEMPERATURE PHOTOLUMINESCENCE; SI NANODOTS;

AMORPHOUS SILICON;

EID: 77953326578     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.03.016     Document Type: Article

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