Electrically driven luminescence of nanocrystalline Si/SiO2 multilayers on various substrates

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 41, Issue 6, 2009, Pages 923-926

  Wang, T ^a   Wei, D Y ^a   Sun, H C ^a   Liu, Y ^a   Chen, D Y ^a   Chen, G R ^a   Xu, J ^a   Li, W ^a   Ma, Z Y ^a   Xu, L ^a   Chen, K J ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

Electroluminescence; Multilayers; Quantum dots

Indexed keywords

AMORPHOUS SI FILMS; CARRIER INJECTIONS; CONTROLLABLE SIZES; CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPIES; ELECTROLUMINESCENCE INTENSITIES; FURNACE ANNEALING; HEAVILY DOPED; IN-SITU; LIGHT EMITTING DIODE LEDS; LUMINESCENCE INTENSITIES; NANO-CRYSTALLINE; POWER SUPPLIES; QUANTUM DOTS; ROOM TEMPERATURES; SI SUBSTRATES; SIGNIFICANT IMPACTS; SILICON NANODOTS; TURN-ON VOLTAGES; VARIOUS SUBSTRATES;

AMORPHOUS FILMS; AMORPHOUS SILICON; ELECTROLUMINESCENCE; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; MULTILAYERS; PLASMA DEPOSITION; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

SUBSTRATES;

EID: 67349087952     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2008.08.001     Document Type: Article

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