Physical mechanisms in double-carrier trap-charge limited transport processes in organic electroluminescent devices: A numerical study

Journal of Applied Physics

Volumn 83, Issue 12, 1998, Pages 7706-7714

  Shen, Jun ^a   Yang, Jie ^a  

^a Arizona State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001303788     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.367942     Document Type: Article

References (31)

1. C. W. Tang and S. A. VanSlyke, Appl. Phys. Lett. 51, 913 (1987).
2. C. W. Tang, S. A. VanSlyke, and C. H. Chen, J. Appl. Phys. 65, 3610 (1989).
3. J. H. Burroughes, D. D. C. Bradley, A. R. Brown, R. N. Marks, K. MacKay, R. H. Friend, P. L. Burn, and A. B. Holmes, Nature (London) 347, 539 (1990).
4. D. Braun and A. J. Heeger, Appl. Phys. Lett. 58, 1982 (1991).
5. P. E. Burrows and S. R. Forrest, Appl. Phys. Lett. 64, 2285 (1993).
6. I. D. Parker, J. Appl. Phys. 75, 1659 (1994).
7. J. Kido, K. Hongawa, K. Okuyama, and K. Nagai, Appl. Phys. Lett. 64, 815 (1994).
8. Z. Shen, P. E. Burrows, V. Bulovic, D. Z. Garbuzov, D. M. McCarty, M. E. Thompson, and S. R. Forrest, Jpn. J. Appl. Phys., Part 2 35, L401 (1996).
9. P. E. Burrows, Z. Shen, V. Bulovic, D. M. McCarty, S. R. Forrest, J. A. Cronin, and M. E. Thompson, J. Appl. Phys. 79, 7991 (1996).
10. P. W. M. Blom, M. J. M. de Jong, and S. Breedijk, Appl. Phys. Lett. 71, 930 (1997).
11. A recent review is given by L. J. Rothberg and A. J. Lovinger, J. Mater. Res. 11, 3174 (1996).
12. D. V. Khramtchenkov, H. Bässler, and V. I. Arkhipov, J. Appl. Phys. 79, 9283 (1996).
13. M. Matsumura, T. Akai, M. Saito, and T. Kimura, J. Appl. Phys. 79, 264 (1996).
14. P. Mark and W. Helfrich, J. Appl. Phys. 33, 205 (1962).
15. M. A. Lampen and P. Mark, Current Injection in Solids (Academic, New York, 1970).
16. K. C. Kao and W. Hwang, Electrical Transport in Solids, with Particular Reference to Organic Semiconductors (Pergamon, New York, 1981).
17. J.-H. Xu, J. Shen, F. So, and H.-C. Lee, Phys. Rev. B (submitted).
18. A preliminary account of the work has been given by J.-H. Xu, J. Shen, F. So, M. Kim, and H.-C. Lee, Proceedings of the 24th International Symp. Compound Semiconductors, San San Diego, CA, 1997.
19. J. Schöbel, D. Ammermann, A. Böhler, S. Dirr, and W. Kowalsky, SID Dig., 97 (1997).
20. G. W. Bak, J. Phys.: Condens. Matter 8, 4145 (1996).
21. H. K. Gummel, IEEE Trans. Electron Devices ED-11, 455 (1964).
22. D. L. Scharfetter and H. K. Gummel, IEEE Trans. Electron Devices ED-16, 64 (1969).
23. B. V. Gokhale, IEEE Trans. Electron Devices ED-17, 594 (1970).
24. C. S. Rafferty, M. R. Pinto, and R. W. Dutton, IEEE Trans. Electron Devices ED-32, 2018 (1985).
25. P. A. Torpey, J. Appl. Phys. 56, 2284 (1984).
26. V. Hurm, J. C. R. Hornung, and O. Manck, J. Appl. Phys. 60, 3214 (1986).
27. See, for example, S. M. Sze, Physics of Semiconductor Devices, 2nd ed (Wiley, New York, 1981).
28. P. W. M. Blom, M. J. M. de Jong, and J. J. M. Vleggaar, Appl. Phys. Lett. 68, 3308 (1996).
29. P. W. M. Blom, M. J. M. de Jong, and M. G. van Munster, Phys. Rev B 55, R656 (1997).
30. C. Adachi, T. Tsutsui, and S. Saito, Optoelectronics 6, 25 (1991).
31. T. Mori, K. Miyachi, and T. Mizutani, J. Phys. D 28, 1461 (1995).