The influence of annealing on manganese implanted GaAs films

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 267, Issue 8-9, 2009, Pages 1626-1629

  Bürger, Danilo ^a   Zhou, Shengqiang ^a   Grenzer, Jörg ^a   Reuther, Helfried ^a   Anwand, Wolfgang ^a   Gottschalch, Volker ^b   Helm, Manfred ^a   Schmidt, Heidemarie ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b UNIVERSITY OF LEIPZIG   (Germany)

Author keywords

DMS; FLA; HR XRD; Ion implantation; RTA; Sputtering

Indexed keywords

ALTERNATIVE ROUTES; ANNEALED SAMPLES; DEPTH DISTRIBUTIONS; DILUTED MAGNETIC SEMICONDUCTORS; DMS; EQUILIBRIUM SOLUBILITIES; FLA; FLASH LAMP ANNEALING; FLASH LAMPS; GAAS; GAAS FILMS; HIGH RESOLUTION X-RAY DIFFRACTIONS; HR-XRD; LOW TEMPERATURES; OUT DIFFUSIONS; POST-ANNEALING EFFECTS; POST-IMPLANTATION ANNEALING; PULSED LASER ANNEALING; RECRYSTALLISATION; RTA; SECONDARY PHASIS; SQUID MEASUREMENTS; WEAK FERROMAGNETISMS;

AUGER ELECTRON SPECTROSCOPY; CRYSTAL GROWTH; DIAMONDS; GALLIUM ALLOYS; ION BOMBARDMENT; ION IMPLANTATION; MAGNETIC PROPERTIES; MAGNETIC SEMICONDUCTORS; MANGANESE COMPOUNDS; MOLECULAR BEAMS; MOLECULAR DYNAMICS; PULSED LASER APPLICATIONS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SEMICONDUCTING GALLIUM; SIPHONS; X RAY DIFFRACTION ANALYSIS;

MANGANESE;

EID: 65249163488     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2009.01.066     Document Type: Article

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