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Applied Physics Letters

Volumn 95, Issue 17, 2009, Pages

Anomalous Hall resistance in Ge:Mn systems with low Mn concentrations

(4) Zhou, Shengqiang a Bürger, Danilo a Helm, Manfred a Schmidt, Heidemarie a

a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANOMALOUS HALL EFFECTS; DILUTED FERROMAGNETIC SEMICONDUCTORS; HALL RESISTANCE; MN CONCENTRATIONS; MN-DOPED;

FLEXIBLE MANUFACTURING SYSTEMS; GERMANIUM; HALL EFFECT; MAGNETIC FIELD EFFECTS; MANGANESE; SEMICONDUCTING GERMANIUM;

MANGANESE COMPOUNDS;

EID: 70350721602 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3257363 Document Type: Article

Times cited : (15)

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