-
1
-
-
19744374735
-
Solid-state light sources getting smart
-
DOI 10.1126/science.1108712
-
E. F. Schubert and J. K. Kim, Science SCIEAS 0036-8075 308, 1274 (2005). 10.1126/science.1108712 (Pubitemid 40746117)
-
(2005)
Science
, vol.308
, Issue.5726
, pp. 1274-1278
-
-
Schubert, E.F.1
Kim, J.K.2
-
2
-
-
0032070986
-
-
JAPLD8 0021-4922. 10.1143/JJAP.37.L479
-
T. Mukai, H. Narimatsu, and S. Nakamura, Jpn. J. Appl. Phys., Part 2 JAPLD8 0021-4922 37, L479 (1998). 10.1143/JJAP.37.L479
-
(1998)
Jpn. J. Appl. Phys., Part 2
, vol.37
, pp. 479
-
-
Mukai, T.1
Narimatsu, H.2
Nakamura, S.3
-
3
-
-
0031588273
-
-
APPLAB 0003-6951. 10.1063/1.120091
-
T. S. Zheleva, O. H. Nam, M. D. Bremser, and R. F. Davis, Appl. Phys. Lett. APPLAB 0003-6951 71, 2472 (1997). 10.1063/1.120091
-
(1997)
Appl. Phys. Lett.
, vol.71
, pp. 2472
-
-
Zheleva, T.S.1
Nam, O.H.2
Bremser, M.D.3
Davis, R.F.4
-
4
-
-
0842330082
-
-
JCRGAE 0022-0248. 10.1016/j.jcrysgro.2003.10.009
-
S. W. Kim, J. T. Oh, J. S. Kang, D. J. Kim, J. H. Won, J. W. Kim, and H. -K. Cho, J. Cryst. Growth JCRGAE 0022-0248 262, 7 (2004). 10.1016/j.jcrysgro. 2003.10.009
-
(2004)
J. Cryst. Growth
, vol.262
, pp. 7
-
-
Kim, S.W.1
Oh, J.T.2
Kang, J.S.3
Kim, D.J.4
Won, J.H.5
Kim, J.W.6
Cho, H.-K.7
-
5
-
-
84896842913
-
-
JAPLD8 0021-4922. 10.1143/JJAP.41.L1431
-
M. Yamada, T. Mitani, Y. Narukawa, S. Shioji, I. Niki, S. Sonobe, K. Deguchi, M. Sano, and T. Mukai, Jpn. J. Appl. Phys., Part 2 JAPLD8 0021-4922 41, L1431 (2002). 10.1143/JJAP.41.L1431
-
(2002)
Jpn. J. Appl. Phys., Part 2
, vol.41
, pp. 1431
-
-
Yamada, M.1
Mitani, T.2
Narukawa, Y.3
Shioji, S.4
Niki, I.5
Sonobe, S.6
Deguchi, K.7
Sano, M.8
Mukai, T.9
-
6
-
-
33745482395
-
Fabrication of pyramidal patterned sapphire substrates for high-efficiency InGaN-based light emitting diodes
-
DOI 10.1149/1.2209587, 063608JES
-
D. S. Wuu, W. K. Wang, K. S. Wen, S. C. Huang, S. H. Lin, R. H. Horng, Y. S. Yu, and M. H. Pan, J. Electrochem. Soc. JESOAN 0013-4651 153, G765 (2006). 10.1149/1.2209587 (Pubitemid 43958782)
-
(2006)
Journal of the Electrochemical Society
, vol.153
, Issue.8
-
-
Wuu, D.S.1
Wang, W.K.2
Wen, K.S.3
Huang, S.C.4
Lin, S.H.5
Horng, R.H.6
Yu, Y.S.7
Pan, M.H.8
-
7
-
-
0032516703
-
-
SCIEAS 0036-8075. 10.1126/science.281.5379.956
-
S. Nakamura, Science SCIEAS 0036-8075 281, 956 (1998). 10.1126/science.281.5379.956
-
(1998)
Science
, vol.281
, pp. 956
-
-
Nakamura, S.1
-
8
-
-
65749083909
-
-
JCRGAE 0022-0248. 10.1016/j.jcrysgro.2009.01.107
-
D. -S. Wuu, H. -W. Wu, S. -T. Chen, T. -Y. Tsai, X. Zheng, and R. -H. Horng, J. Cryst. Growth JCRGAE 0022-0248 311, 3063 (2009). 10.1016/j.jcrysgro. 2009.01.107
-
(2009)
J. Cryst. Growth
, vol.311
, pp. 3063
-
-
Wuu, D.-S.1
Wu, H.-W.2
Chen, S.-T.3
Tsai, T.-Y.4
Zheng, X.5
Horng, R.-H.6
-
9
-
-
27344453017
-
Simulation and fabrication of highly efficient InGaN-based LEDs with corrugated interface substrate
-
DOI 10.1002/pssc.200461337
-
J. H. Cho, H. S. Kim, J. W. Lee, S. H. Yoon, C. S. Sone, Y. J. Park, and E. J. Yoon, Phys. Status Solidi C 1610-1634 2, 2874 (2005). 10.1002/pssc. 200461337 (Pubitemid 41525041)
-
(2005)
Physica Status Solidi C: Conferences
, vol.2
, Issue.7
, pp. 2874-2877
-
-
Cho, J.1
Kim, H.2
Kim, H.3
Lee, J.W.4
Yoon, S.5
Sone, C.6
Park, Y.7
Yoon, E.8
-
10
-
-
33746324812
-
Improvement of luminous intensity of InGaN light emitting diodes grown on hemispherical patterned sapphire
-
DOI 10.1002/pssc.200565308, Papers Presented at 6th International Conference on Nitride Semiconductors, ICNS-6
-
J. -H. Lee, J. -T. Oh, J. -S. Park, J. -W. Kim, Y. -C. Kim, J. -W. Lee, and H. -K. Cho, Phys. Status Solidi C 1610-1634 3, 2169 (2006). 10.1002/pssc.200565308 (Pubitemid 44115916)
-
(2006)
Physica Status Solidi (C) Current Topics in Solid State Physics
, vol.3
, pp. 2169-2173
-
-
Lee, J.-H.1
Oh, J.-T.2
Park, J.-S.3
Kim, J.-W.4
Kim, Y.-C.5
Lee, J.-W.6
Cho, H.-K.7
-
11
-
-
0000441255
-
-
JAPIAU 0021-8979. 10.1063/1.366660
-
W. Shan, A. J. Fischer, S. J. Hwang, B. D. Little, R. J. Hauenstein, X. C. Xie, D. S. Kim, and J. J. Song, J. Appl. Phys. JAPIAU 0021-8979 83, 455 (1998). 10.1063/1.366660
-
(1998)
J. Appl. Phys.
, vol.83
, pp. 455
-
-
Shan, W.1
Fischer, A.J.2
Hwang, S.J.3
Little, B.D.4
Hauenstein, R.J.5
Xie, X.C.6
Kim, D.S.7
Song, J.J.8
-
12
-
-
65349183084
-
-
IPTLEL 1041-1135
-
J.-H. Lee, J. T. Oh, Y. C. Kim, and J.-H. Lee, IEEE Photon. Technol. Lett. IPTLEL 1041-1135 20, 1563 (2008).
-
(2008)
IEEE Photon. Technol. Lett.
, vol.20
, pp. 1563
-
-
Lee, J.-H.1
Oh, J.T.2
Kim, Y.C.3
Lee, J.-H.4
-
13
-
-
0029755411
-
Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films
-
DOI 10.1063/1.116495, PII S0003695196004056
-
B. Heying, X. H. Wu, S. Keller, Y. Li, D. Kapolnek, B. P. Keller, S. P. DenBaars, and J. S. Speck, Appl. Phys. Lett. APPLAB 0003-6951 68, 643 (1996). 10.1063/1.116495 (Pubitemid 126683916)
-
(1996)
Applied Physics Letters
, vol.68
, Issue.5
, pp. 643-645
-
-
Heying, B.1
Wu, X.H.2
Keller, S.3
Li, Y.4
Kapolnek, D.5
Keller, B.P.6
Denbaars, S.P.7
Speck, J.S.8
|