Stress relaxation effect in porous 3C-SiC/Si heterostructure by micro-Raman spectroscopy

Applied Physics Letters

Volumn 79, Issue 15, 2001, Pages 2366-2368

  Lysenko, V ^a   Barbier, D ^a   Champagnon, B ^b  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^b UNIVERSITÉ LYON 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035828589     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1409278     Document Type: Article

References (13)

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