New method for growing silicon carbide on silicon by solid-phase epitaxy: Model and experiment

Physics of the Solid State

Volumn 50, Issue 7, 2008, Pages 1238-1245

  Kukushkin, S A ^a   Osipov, A V ^a  

^a INSTITUTE OF PROBLEMS OF MECHANICAL ENGINEERING   (Russian Federation)

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Indexed keywords

EID: 47249102572     PISSN: 10637834     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063783408070081     Document Type: Article

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