Heteroepitaxy of 3C -SiC on different on-axis oriented silicon substrates

Journal of Applied Physics

Volumn 105, Issue 8, 2009, Pages

  Anzalone, R ^a,b   Severino, A ^a,b   D'Arrigo, G ^a   Bongiorno, C ^a   Abbondanza, G ^c   Foti, G ^a   Saddow, S ^d   La Via, F ^a  

^a CNR   (Italy)

^b UNIVERSITY OF CATANIA   (Italy)

^c Epitaxial Technology Center   (Italy)

^d University of South Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

3C-SIC FILMS; FIRST ORDERS; GROWTH DIRECTIONS; HETERO EPITAXIES; HETERO-EPITAXIAL GROWTHS; HETEROEPITAXIAL SYSTEMS; HIGH GROWTH RATES; LOW-PRESSURE CHEMICAL VAPOR DEPOSITIONS; MULTISTEP GROWTH PROCESS; NUMERICAL SIMULATIONS; ORIENTED SILICONS; PACKING DENSITIES; RADIUS OF CURVATURES; SECOND ORDERS; SIC FILMS; SIC GROWTHS; SILICON PRECURSORS; SILICON SUBSTRATE ORIENTATIONS; SUBSTRATE ORIENTATIONS; TRICHLOROSILANE;

EPITAXIAL FILMS; EPITAXIAL GROWTH; FILM GROWTH; SILICON; SILICON CARBIDE; SINGLE CRYSTALS; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 65449149149     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3095462     Document Type: Article

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