Schottky barrier height behavior of Pt-Ru alloy contacts on single-crystal n-ZnO

Journal of Applied Physics

Volumn 107, Issue 10, 2010, Pages

  Nagata, T ^a   Volk, J ^b   Haemori, M ^a   Yamashita, Y ^a   Yoshikawa, H ^a   Hayakawa, R ^a   Yoshitake, M ^a   Ueda, S ^a   Kobayashi, K ^a   Chikyow, T ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY ELECTRODES; CRYSTALLINITIES; CUBIC STRUCTURE; CURRENT-VOLTAGE MEASUREMENTS; HARD X-RAY PHOTOELECTRON SPECTROSCOPY; HEXAGONAL STRUCTURES; IDENTICAL CONDITIONS; ION-BEAM DEPOSITIONS; MIXED PHASE; OXIDIZATION; PTRU ALLOY; SCHOTTKY; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY CONTACTS; ZNO; ZNO SUBSTRATE;

ALLOYS; CHEMICAL MODIFICATION; CRYSTAL STRUCTURE; ELECTRODES; PHASE DIAGRAMS; PHASE INTERFACES; PLATINUM; PLATINUM ALLOYS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR METAL BOUNDARIES; SINGLE CRYSTALS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC; ZINC ALLOYS; ZINC OXIDE;

RUTHENIUM ALLOYS;

EID: 77952976245     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3427562     Document Type: Article

References (40)

1. D. M. Bagnall, Y. F. Chen, Z. Zhu, T. Yao, S. Koyama, M. Y. Shen, and T. Goto, Appl. Phys. Lett. APPLAB 0003-6951 70, 2230 (1997). 10.1063/1.118824
2. A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, Nat. Mater. 4, 42 (2005). 10.1038/nmat1284 1476-1122 (Pubitemid 40021000)
3. S. J. Pearton, D. P. Norton, K. Ip, Y. W. Heo, and T. Steiner, J. Vac. Sci. Technol. B JVTBD9 1071-1023 22, 932 (2004). 10.1116/1.1714985
4. D. C. Look, Mater. Sci. Eng., B MSBTEK 0921-5107 80, 383 (2001). 10.1016/S0921-5107(00)00604-8 (Pubitemid 32331341)
5. T. Nagata, P. Ahmet, and T. Chikyow, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 46, 2907 (2007). 10.1143/JJAP.46.2907
6. F. Oba, S. Nishitani, S. Isotani, H. Adachi, and I. Tanaka, J. Appl. Phys. JAPIAU 0021-8979 90, 824 (2001). 10.1063/1.1380994
7. M. W. Allen, S. M. Durbin, and J. B. Metson, Appl. Phys. Lett. APPLAB 0003-6951 91, 053512 (2007). 10.1063/1.2768028 (Pubitemid 47210867)
8. H. Endo, M. Sugibuchi, K. Takahashi, S. Goto, S. Sugimura, K. Hane, and Y. Kashiwaba, Appl. Phys. Lett. APPLAB 0003-6951 90, 121906 (2007). 10.1063/1.2715100 (Pubitemid 46482219)
9. H. K. Kim, S. H. Han, T. Y. Seong, and W. K. Choi, Appl. Phys. Lett. APPLAB 0003-6951 77, 1647 (2000). 10.1063/1.1308527
10. M. W. Allen, M. M. Alkaisi, and S. M. Durbin, Appl. Phys. Lett. APPLAB 0003-6951 89, 103520 (2006). 10.1063/1.2346137 (Pubitemid 44359667)
11. M. W. Allen and S. M. Durbin, Appl. Phys. Lett. APPLAB 0003-6951 92, 122110 (2008). 10.1063/1.2894568 (Pubitemid 351451644)
12. K. Besocke, B. Krahl-Urban, and H. Wagner, Surf. Sci. SUSCAS 0039-6028 68, 39 (1977). 10.1016/0039-6028(77)90187-X
13. H. Matsui, H. Saeki, T. Kawai, A. Sasaki, M. Yoshimoto, M. Tsubaki, and H. Tabata, J. Vac. Sci. Technol. B JVTBD9 1071-1023 22, 2454 (2004). 10.1116/1.1792237
14. N. Ohashi, Y. Adachi, T. Ohsawa, K. Matsumoto, I. Sakaguchi, H. Haneda, S. Ueda, H. Yoshikawa, and K. Kobayashi, Appl. Phys. Lett. APPLAB 0003-6951 94, 122102 (2009). 10.1063/1.3103271
15. T. Nagata, J. Volk, Y. Yamashita, H. Yoshikawa, M. Haemori, R. Hayakawa, M. Yoshitake, S. Ueda, K. Kobayashi, and T. Chikyow, Appl. Phys. Lett. APPLAB 0003-6951 94, 221904 (2009). 10.1063/1.3149701
16. X. D. Xiang, X. Sun, G. Briceno, Y. Lou, K. Wang, H. Chang, W. G. Wallance-Freedman, S. Chen, and P. G. Schulz, Science SCIEAS 0036-8075 268, 1738 (1995). 10.1126/science.268.5218.1738
17. T. Fukumura, Z. Jin, A. Ohtomo, H. Koinuma, and M. Kawasaki, Appl. Phys. Lett. APPLAB 0003-6951 75, 3366 (1999). 10.1063/1.125353
18. P. Ahmet, T. Nagata, D. Kukuruznyak, S. Yagyu, Y. Wakayama, M. Yoshitake, and T. Chikyow, Appl. Surf. Sci. ASUSEE 0169-4332 252, 2472 (2006). 10.1016/j.apsusc.2005.05.078 (Pubitemid 43132728)
19. T. Nagata, M. Haemori, and T. Chikyow, J. Vac. Sci. Technol. A JVTAD6 0734-2101 27, 492 (2009). 10.1116/1.3097847
20. J. M. Hutchinson, Jr., Platinum Met. Rev. PTMRA3 0032-1400 16, 88 (1972).
21. D. E. Aspnes, Optical Properties of Solids: New Developments (North Holland, Amsterdam, 1976).
22. R. M. A. Azzam and N. M. Bashara, Ellipsometry and Polarized Light (North Holland, Amsterdam, 1977).
23. S. M. Sze, Physics of Semiconductors Devices (Wiley, New York, 1981).
24. S. Doniach and M. Šunjić, J. Phys. C JPSOAW 0022-3719 3, 285 (1970). 10.1088/0022-3719/3/2/010
25. D. A. Shirley, Phys. Rev. B PRBMDO 0163-1829 5, 4709 (1972). 10.1103/PhysRevB.5.4709
26. J. F. Moulder, W. F. Stickle, P. E. Sobol, and K. D. Bomben, Handbook of X-ray Photoelectron Spectroscopy (Physical Electronics, Eden Prairie, MS, 1995).
27. G. M. Bancroft, I. Adams, L. L. Coatsworth, C. D. Bennewitz, J. D. Brown, and W. D. Westwood, Anal. Chem. ANCHAM 0003-2700 47, 586 (1975). 10.1021/ac60353a050
28. T. L. Barr, J. Phys. Chem. JPCHAX 0022-3654 82, 1801 (1978). 10.1021/j100505a006
29. K. S. Kim and N. Winograd, J. Catal. JCTLA5 0021-9517 35, 66 (1974). 10.1016/0021-9517(74)90184-5
30. H. J. Lewerenz, S. Stucki, and R. Kötz, Surf. Sci. SUSCAS 0039-6028 126, 463 (1983). 10.1016/0039-6028(83)90744-6
31. K. Laajalehto, I. Kartio, and P. Nowak, Appl. Surf. Sci. ASUSEE 0169-4332 81, 11 (1994). 10.1016/0169-4332(94)90080-9
32. S. Bera, A. A. M. Prince, S. Velmurugan, P. S. Raghavan, R. Gopalan, G. Panneerselvan, and S. V. Narashimhan, J. Mater. Sci. JMTSAS 0022-2461 36, 5379 (2001). 10.1023/A:1012488422484 (Pubitemid 33120538)
33. P. Druska and U. Steinike, J. Solid State Chem. JSSCBI 0022-4596 146, 13 (1999). 10.1006/jssc.1998.8284
34. T. B. Massalski, Binary Alloy Phase Diagrams (American Society for Metals, Ohio, 1986), Vol. 2.
35. E. C. M. Chen, W. E. Wentworth, and J. A. Ayala, J. Chem. Phys. JCPSA6 0021-9606 67, 2642 (1977). 10.1063/1.435176
36. H. B. Michaelson, J. Appl. Phys. JAPIAU 0021-8979 21, 536 (1950). 10.1063/1.1699702
37. J. A. Aranovich, D. Golmayo, A. L. Fahrenbruch, and R. H. Bube, Appl. Phys. Lett. APPLAB 0003-6951 51, 4260 (1980).
38. K. Shiraishi, Y. Akasaka, S. Miyazaki, T. Nakayama, T. Nakaoka, G. Nakamura, K. Torii, H. Furutou, A. Ohta, P. Ahmet, K. Ohmori, H. Watanabe, T. Chikyow, M. L. Green, Y. Nara, and K. Yamada, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 2005 (5), 39 (2005). 10.1109/IEDM.2005.1609260
39. R. Bouwman, G. J. M. Lippits, and W. H. M. Sachtler, J. Catal. JCTLA5 0021-9517 25, 350 (1972). 10.1016/0021-9517(72)90237-0
40. P. E. C. Franken and V. Ponec, J. Catal. JCTLA5 0021-9517 35, 417 (1974). 10.1016/0021-9517(74)90225-5