Minimizing interface contamination in MBE overgrowth

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 582-585

  Hey, R ^a   Wassermeier, M ^a   Horicke M ^a   Wiebicke, E ^a   Kostial, H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; CONTAMINATION; DESORPTION; EVAPORATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; STRIPPING (REMOVAL); SURFACE CLEANING;

ATOMIC HYDROGEN-ASSISTED OXIDE DESORPTION; EPITAXIAL REGROWTH; INTERFACE CONTAMINATION; MOLECULAR BEAM EPITAXY OVERGROWTH; OZONE STRIPPING; REEVAPORATION PROCESS;

MOLECULAR BEAM EPITAXY;

EID: 0032656275     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01413-4     Document Type: Article

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