Fabrication and characterization of AlN/InN heterostructures

Applied Physics Express

Volumn 2, Issue 1, 2009, Pages 0110021-0110023

  Fujii, Tomoaki ^a   Shimomoto, Kazuma ^b   Ohba, Remi ^a   Toyoshima, Yasushi ^a   Horiba, Koji ^a,d   Ohta, Jitsuo ^b,c   Fujioka, Hiroshi ^b,c,d   Osnima, Masaharu ^a,d   Ueda, Shigenori ^e   Yoshikawa, Hideki ^e   Kobayashi, Keisuke ^e  

^a UNIVERSITY OF TOKYO   (Japan)

^b INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^c KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY   (Japan)

^d JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^e NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; ELECTRONIC PROPERTIES; EMISSION SPECTROSCOPY; GROWTH (MATERIALS); HETEROJUNCTIONS; PROGRAMMABLE LOGIC CONTROLLERS; PULSED LASER APPLICATIONS; PULSED LASER DEPOSITION; ZIRCONIA;

CHARACTERIZATION TECHNIQUES; CONDUCTION BAND OFFSET (CBO); GROWTH TECHNIQUES; HETEROSTRUCTURES; HIGH QUALITY (HQ); LASER DEPOSITIONS; LOW TEMPERATURE (LTR); PHOTOEMISSION SPECTROSCOPY (PES);

YTTRIA STABILIZED ZIRCONIA;

EID: 58449097854     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.2.011002     Document Type: Article

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