Enhancement of thermal stability using ferromagnetically coupled synthetic free layers in MgO-based magnetic tunnel junctions

IEEE Transactions on Magnetics

Volumn 46, Issue 6, 2010, Pages 2232-2235

  Yakata, Satoshi ^a   Kubota, Hotoshi ^a   Seki, Takayuki ^a   Yakushiji, Kay ^a   Fukushima, Akio ^a   Yuasa, Shinji ^a   Ando, Koji ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Ferromagnetically coupled synthetic free layer; MgO based MTJ; Spin RAM; Thermal stability

Indexed keywords

COBALT COMPOUNDS; IRON COMPOUNDS; MAGNESIA; MAGNETIC ANISOTROPY; MAGNETIZATION; MRAM DEVICES; OXIDE MINERALS; RANDOM ACCESS STORAGE; STABILITY; THERMODYNAMIC STABILITY; TUNNEL JUNCTIONS;

EFFECTIVE MAGNETIZATIONS; FREE LAYERS; HIGH THERMAL STABILITY; MAGNETIC LAYERS; MAGNETIC TUNNEL JUNCTION; NONVOLATILE MEMORY CELLS; SHAPE ANISOTROPY; SWITCHING PROBABILITY;

MAGNETIC DEVICES;

EID: 77952865659     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2010.2045741     Document Type: Article

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