Low-current spin-transfer switching and its thermal durability in a low-saturation-magnetization nanomagnet

Applied Physics Letters

Volumn 85, Issue 23, 2004, Pages 5634-5636

  Yagami, K ^a   Tulapurkar, A A ^b   Fukushima, A ^b   Suzuki, Y ^b,c  

^a SONY CORPORATION   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; DATA STORAGE EQUIPMENT; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; ELECTRODES; ELECTRON BEAM LITHOGRAPHY; HYSTERESIS; MAGNETIZATION; MAGNETORESISTANCE; MOSFET DEVICES; RANDOM ACCESS STORAGE; THERMAL EFFECTS;

MAGNET CELLS; SPIN-TRANSFER SWITCHING; SWITCHING PROCESS; THERMAL DURABILITY;

SWITCHING;

EID: 12844265481     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1829140     Document Type: Article

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