Ultralow resistance-area product of 0.4 Ω (μm)2 and high magnetoresistance above 50% in CoFe/B/MgO/CoFeB magnetic tunnel junctions

Applied Physics Letters

Volumn 89, Issue 16, 2006, Pages

  Nagamine, Yoshinori ^a   Maehara, Hiroki ^a   Tsunekawa, Koji ^a   Djayaprawira, David D ^a,c   Watanabe, Naoki ^a   Yuasa, Shinji ^b,d   Ando, Koji ^b  

^a Canon ANELVA Corporation ^*  (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c OSAKA UNIVERSITY   (Japan)

^d JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; CRYSTALLINE MATERIALS; CRYSTALLIZATION; HARD DISK STORAGE; MAGNETIC DEVICES; MAGNETORESISTANCE;

GROWTH CHAMBER; ROOM TEMPERATURE; TUNNELING BARRIERS;

TUNNEL JUNCTIONS;

EID: 33750179077     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2352046     Document Type: Article

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