Effect of annealing and barrier thickness on MgO-based Co/Pt and Co/Pd multilayered perpendicular magnetic tunnel junctions

IEEE Transactions on Magnetics

Volumn 44, Issue 11 PART 2, 2008, Pages 3601-3604

  Ye, Li Xiu ^a   Lee, Ching Ming ^a   Syu, Jhin Wei ^a   Wang, Yi Rung ^a   Lin, Kun Wei ^b   Chang, Yu Hsiu ^b   Wu, Te Ho ^a  

^a NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Co Pd; Co Pt; MgO; Perpendicular magnetic tunnel junction (pMTJ); Tunneling magnetoresistance (TMR)

Indexed keywords

ANNEALING; COBALT COMPOUNDS; MAGNESIA; MAGNESIUM; MAGNETIC DEVICES; OXIDE MINERALS; PLATINUM COMPOUNDS; TUNNELLING MAGNETORESISTANCE;

ANNEALING CONDITION; ANNEALING TEMPERATURES; BARRIER THICKNESS; CURRENT IN PLANES; EFFECT OF ANNEALING; MAGNETIC CHARACTERISTIC; MAGNETIC TUNNEL JUNCTION; TUNNELING MAGNETORESISTANCE;

TUNNEL JUNCTIONS;

EID: 70350581175     PISSN: 00189464     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMAG.2008.2001648     Document Type: Article

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