Changes in the valence band structure of as-grown InN(0001)-2T2 surfaces upon exposure to oxygen and water

Physica Status Solidi (A) Applications and Materials Science

Volumn 207, Issue 5, 2010, Pages 1037-1040

  Eisenhardt, Anja ^a   Reiß, Stephanie ^a   Himmerlich, Marcel ^a   Schaefer, Juergen A ^a   Krischok, Stefan ^a  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

InN; Oxygen water exposure; Photoelectron spectroscopy; Surface chemistry; Valence band changes; Work function

Indexed keywords

AS-GROWN; BANDBENDING; CHEMICAL OXYGEN; CHEMICAL SURFACES; CONTAMINATION-FREE; CORE-LEVEL PEAKS; ELECTRON ENERGIES; IN-SITU; INN; INN FILMS; OXYGEN EXPOSURE; OXYGEN UPTAKE RATES; OXYGEN/WATER EXPOSURE; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; RECONSTRUCTED SURFACES; ROOM TEMPERATURE; SURFACE BAND BENDING; SURFACE STATE; WATER EXPOSURE; XPS;

BINDING ENERGY; CAPILLARITY; CRYSTAL GROWTH; ELECTRONIC PROPERTIES; ELECTRONS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OXYGEN; PHOTOELECTRICITY; PHOTOIONIZATION; PHOTONS; SURFACE CHEMISTRY; SURFACES; WORK FUNCTION; X RAY PHOTOELECTRON SPECTROSCOPY;

VALENCE BANDS;

EID: 77952737726     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200983110     Document Type: Conference Paper

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