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Volumn 7, Issue 2, 2010, Pages 173-176
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Electron-phonon-plasmon interaction in MBE-grown indium nitride - A high resolution electron energy loss spectroscopy (HREELS) study
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Author keywords
[No Author keywords available]
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Indexed keywords
ACCUMULATION LAYERS;
BANDBENDING;
BULK CONDUCTION BANDS;
BULK SENSITIVE;
CONDUCTION-BAND PROFILE;
DIELECTRIC THEORY;
ELECTRON PHONON;
FREE ELECTRON;
HIGH RESOLUTION;
HIGH-RESOLUTION ELECTRON ENERGY LOSS SPECTROSCOPY;
INDIUM NITRIDE;
PLASMA-ASSISTED MOLECULAR BEAM EPITAXY;
PRIMARY BEAM ENERGIES;
SELF-CONSISTENT CALCULATION;
SHEET DENSITY;
SPACE CHARGES;
SURFACE ACCUMULATION;
SURFACE OPTICAL PHONONS;
SURFACE PHONON;
SURFACE PREPARATION;
SURFACE STATE;
UNINTENTIONAL DOPING;
VACUUM TRANSFER;
CONDUCTION BANDS;
CRYSTAL GROWTH;
ELECTRON MOBILITY;
ELECTRONS;
ENERGY DISSIPATION;
HETEROJUNCTIONS;
MOLECULAR BEAM EPITAXY;
MOLECULAR BEAMS;
NANOSCIENCE;
NITRIDES;
PHONONS;
PLASMA OSCILLATIONS;
SEMICONDUCTING FILMS;
SURFACE PHENOMENA;
ELECTRON ENERGY LOSS SPECTROSCOPY;
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EID: 77954317910
PISSN: 18626351
EISSN: 16101642
Source Type: Journal
DOI: 10.1002/pssc.200982494 Document Type: Conference Paper |
Times cited : (6)
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References (20)
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