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Volumn 49, Issue 4 PART 1, 2010, Pages 0411021-0411024

Carrier compensation by excess oxygen atoms in anatase Ti 0.94Nb0.06O2+δ epitaxial thin films

(9) Nogawa, Hiroyuki a Hitosugi, Taro b,c Chikamatsu, Akira a Nakao, Shoichiro c Hirose, Yasushi a,c Shimada, Toshihiro a,c Kumigashira, Hiroshi a Oshima, Masaharu a Hasegawa, Tetsuya a,c

a UNIVERSITY OF TOKYO (Japan)

b TOHOKU UNIVERSITY (Japan)

c KANAGAWA ACADEMY OF SCIENCE AND TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR STATE; CARRIER COMPENSATION; CARRIER DENSITY; CONCENTRATION OF; CORE LEVELS; ELECTRICAL TRANSPORT PROPERTIES; ELECTRON CARRIER; EPITAXIAL THIN FILMS; EXCESS OXYGEN; IMPURITY STATE; INTERSTITIAL SITES; NB DOPING; OXYGEN ANNEALING; POST DEPOSITION ANNEALING; PURE OXYGEN; VALENCE-BAND PHOTOEMISSION SPECTROSCOPY; X RAY PHOTOEMISSION SPECTROSCOPY;

ELECTRIC PROPERTIES; EMISSION SPECTROSCOPY; EPITAXIAL FILMS; GATES (TRANSISTOR); LUMINESCENCE OF ORGANIC SOLIDS; OXYGEN; PHOTOEMISSION; TITANIUM DIOXIDE; TRANSPORT PROPERTIES;

ANNEALING;

EID: 77952605106 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.49.041102 Document Type: Article

Times cited : (9)

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