New Degradation Phenomenon in Wide Channel poly-Si TFTs Fabricated by Low Temperature Process

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1996, Pages 781-784

  Inoue, Satoshi ^a   Ohshima, Hiroyuki ^a  

^a Base Technology Research Center   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

POLYCRYSTALLINE MATERIALS; POLYSILICON; THIN FILM TRANSISTORS; CHARGE CARRIERS; ELECTRIC BREAKDOWN; LOW TEMPERATURE OPERATIONS; RELIABILITY; SEMICONDUCTING SILICON; THERMAL EFFECTS;

CHANNEL WIDTHS; LOW- TEMPERATURE PROCESS; LOWS-TEMPERATURES; N-CHANNEL; POLYCRYSTALLINE; SUBTHRESHOLD CHARACTERISTICS;

TEMPERATURE; THIN FILM TRANSISTORS;

GATE OXIDE; HOLES; HOT ELECTRON INJECTION;

EID: 0030397508     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1996.554096     Document Type: Conference Paper

References (2)

1. H. Ohshima, et al., SID ‘93 Digest, 387(1993)
2. S. Inoue, et al., Asia Display ‘95 Digest, 339(1995)