Positron annihilation depth-profiling as a promising tool for the structural analysis of light-soaked a-Si:H absorber layers

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 3-4, 2010, Pages 632-635

  Eijt, S W H ^a   Zhu, H ^a   Schut, H ^a   Tijssen, M ^b   Zeman, M ^b  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI:H; ABSORBER LAYERS; CVD METHOD; DEFECT EVOLUTION; DOPPLER BROADENING LINE-SHAPE PARAMETERS; FLOW RATIOS; HYDROGENATED AMORPHOUS SILICON (A-SI:H); LIGHT SOAKING; LOCAL COMPOSITIONS; PHOTOCURRENT SPECTROSCOPY; POSITRON TRAPPING; S PARAMETERS; SENSITIVE PROBE; TIME-DEPENDENT;

CHEMICAL VAPOR DEPOSITION; DEFECTS; DEPTH PROFILING; POSITRON ANNIHILATION; POSITRON ANNIHILATION SPECTROSCOPY; STRUCTURAL ANALYSIS;

AMORPHOUS SILICON;

EID: 77952569194     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200982882     Document Type: Conference Paper

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