Hydrogen collision model of light-induced metastability in hydrogenated amorphous silicon

Solid State Communications

Volumn 105, Issue 6, 1998, Pages 387-391

  Branz, Howard M ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMS; CALCULATIONS; CHARGE CARRIERS; CHEMICAL BONDS; CRYSTAL DEFECTS; HYDROGEN; MATHEMATICAL MODELS; MOLECULAR DYNAMICS; PHOTOCHEMICAL REACTIONS; REACTION KINETICS;

HYDROGEN COLLISION MODEL; HYDROGENATED AMORPHOUS SILICON; LIGHT INDUCED METASTABILITY;

AMORPHOUS SILICON;

EID: 0031995321     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(97)10142-9     Document Type: Article

References (31)

1. Staebler, D.L. and Wronski, C.R., Appl. Phys. Lett., 31, 1977, 292.
2. Carlson, D.E. and Magee, C.W., Appl. Phys. Lett., 33, 1978, 81.
3. Branz, H.M., Asher, S.E. and Nelson, B.P., Phys. Rev., B47, 1993, 7061.
4. Santos, P.V., Johnson, N.M. and Street, R.A., Phys. Rev. Lett., 67, 1991, 2686.
5. Biswas, R., Li, Q., Pan, B.C. and Yoon, Y., in Amorphous and Microcrystalline Silicon Technology - 1997 (Edited by M. Hack, E. Schiff, R. Schropp, I. Shimizu and S. Wagner). Materials Research Society, Pittsburgh, 1997, v. 467, p. 135; Phys. Rev. B, 57, 1998, in press.
6. Biswas, R., Li, Q., Pan, B.C. and Yoon, Y., in Amorphous and Microcrystalline Silicon Technology - 1997 (Edited by M. Hack, E. Schiff, R. Schropp, I. Shimizu and S. Wagner). Materials Research Society, Pittsburgh, 1997, v. 467, p. 135; Phys. Rev. B, 57, 1998, in press.
7. Street, R.A. and Winer, K., Phys. Rev., B40, 1989, 6236.
8. Zafar, S. and Schiff, E.A., Phys. Rev., B40, 1989, 5235.
9. Stutzmann, M., Jackson, W.B. and Tsai, C.C., Phys. Rev., B32, 1985, 23.
10. Stradins, P. and Fritzsche, H., Phil. Mag., B69, 1994, 121.
11. Wu, Z.Y., Siefert, J.M. and Equer, B., J. Non-Cryst. Solids, 137 & 138, 1991, 227.
12. Gleskova, H., Bullock, J.N. and Wagner, S., J. Non-Cryst. Solids, 164 & 166, 1993, 183.
13. Isomura, M. and Wagner, S., in Amorphous Silicon Technology - 1992 (Edited by A. Madan, M.J. Thompson, P.G. LeComber, Y. Hamakawa and E.A. Schiff), p. 473. Materials Research Society, Pittsburgh, 1992.
14. Smith, ZE. and Wagner, S., in Advances in Amorphous Semiconductors (Edited by H. Fritzsche), p. 409. World Scientific, Singapore, 1988.
15. Zafar, S. and Schiff, E.A., J. Non-Cryst. Solids, 137, 1991, 323.
16. Street, R.A., Kakalios, J., Tsai, C.C. and Hayes, T.M., Phys. Rev., B35, 1987, 1316.
17. Darwich, R., Roca i Cabarrocas, P., Vallon, S., Ossikovski, R., Morin, P. and Zellama, K., Phil. Mag., B72, 1995, 363.
18. Kemp, M. and Branz, H.M., Phys. Rev., B52, 1995, 13946.
19. Branz, H.M., Bullock, J., Asher, S., Gleskova, H. and Wagner, S., unpublished, 1997.
20. Branz, H.M., Bullock, J., Asher, S., Gleskova, H. and Wagner, S., J. Non-Cryst. Solids, 198-200, 1996, 441.
21. Lyding, J.W., Hess, K. and Kizilyalli, I.C., Appl. Phys. Lett., 68, 1996, 2526.
22. Isomura, M., Park, H.R., Hata, N., Maruyama, A., Roca i Cabarrocas, P., Wagner, S., Abelson, J.R. and Finger, F., in Proc. Int. PVSEC-5, p. 71. Kyoto, Japan, 1990.
23. Tzanetakis, P., Private communication.
24. Street, R.A. and Biegelsen, D.K., Solid State Commun., 44, 1982, 501.
25. Dersch, H., Stuke, J. and Beichler, J., Appl. Phys. Lett., 38, 1981 ,456.
26. Yamasaki, S. and Isoya, J., J. Non-Cryst. Solids, 164-166, 1993, 169.
27. Stutzmann, M., in Amorphous and Microcrystalline Silicon Technology - 1997 (Edited by M. Hack, E.A. Schiff, R. Schropp, I. Shimizu and S. Wagner). Materials Research Society, Pittsburgh, 1997, v. 467.
28. Masson, D.P., Ouhlal, A. and Yelon, A., J. Non-Cryst. Solids, 190, 1995, 151.
29. Fritzsche, H., Solid State Commun., 94, 1995, 953.
30. Godet, C., Morin, P. and Roca i Cabarrocas, P., J. Non-Cryst. Solids, 198-200, 1996, 449.
31. Nakamura, N., Watanabe, K., Nishikuni, M., Hishikawa, Y., Tsuda, S., Nishiwaki, H., Ohnishi, M. and Kuwano, Y., J. Non-Cryst. Solids, 59/60, 1983, 1139.