Static dielectric constant of Al nanocrystal/ Al2 O3 nanocomposite thin films determined by the capacitance-voltage reconstruction technique

Applied Physics Letters

Volumn 96, Issue 17, 2010, Pages

  Liu, Z ^a   Chen, T P ^a   Liu, Y ^a,b   Yang, M ^a   Wong, J I ^a   Cen, Z H ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE; DIELECTRIC CONSTANTS; DIPOLE EFFECTS; HIGH CURRENTS; HIGHER TEMPERATURES; MATRIX; NANOCOMPOSITE THIN FILMS; PURE AL; RADIO-FREQUENCY-MAGNETRON SPUTTERING; TEMPERATURE DEPENDENCE;

CAPACITANCE; DANGLING BONDS; NANOCOMPOSITES; PERMITTIVITY; SYNTHESIS (CHEMICAL); THIN FILMS;

ALUMINUM;

EID: 77952393667     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3425714     Document Type: Article

References (21)

1. S. Nakata, K. Saito, and M. Shimada, Appl. Phys. Lett. APPLAB 0003-6951 87, 223110 (2005). 10.1063/1.2137449 (Pubitemid 41669263)
2. G. N. van den Hoven, R. J. I. M. Koper, A. Polman, C. van Dam, J. W. M. van Uffelen, and M. K. Smit, Appl. Phys. Lett. APPLAB 0003-6951 68, 1886 (1996). 10.1063/1.116283 (Pubitemid 126688413)
3. T. Li, S. Yang, and Y. Du, Nanotechnology NNOTER 0957-4484 16, 365 (2005). 10.1088/0957-4484/16/4/006 (Pubitemid 41236991)
4. B. Li, G. Williams, S. C. Rand, T. Hinklin, and R. M. Laine, Opt. Lett. OPLEDP 0146-9592 27, 394 (2002). 10.1364/OL.27.000394
5. K. -F. Chiu and C. C. Dai, Thin Solid Films THSFAP 0040-6090 513, 374 (2006). 10.1016/j.tsf.2006.02.008 (Pubitemid 43928093)
6. Y. Liu, T. P. Chen, W. Zhu, M. Yang, Z. H. Cen, J. I. Wong, Y. B. Li, S. Zhang, X. B. Chen, and S. Fung, Appl. Phys. Lett. APPLAB 0003-6951 93, 142106 (2008). 10.1063/1.2994695
7. W. Zhu, T. P. Chen, Y. Liu, M. Yang, S. Zhang, W. L. Zhang, and S. Fung, IEEE Trans. Electron Devices IETDAI 0018-9383 56, 2060 (2009). 10.1109/TED.2009.2026110
8. Z. Liu, T. P. Chen, Y. Liu, M. Yang, J. I. Wong, Z. H. Cen, S. Zhang, and Y. B. Li, Appl. Phys. Lett. APPLAB 0003-6951 94, 243106 (2009). 10.1063/1.3156028
9. S. Yanagiya and M. Ishida, J. Electron. Mater. JECMA5 0361-5235 28, 496 (1999). 10.1007/s11664-999-0101-3
10. S. M. Sze and K. K. Ng, Physics of Semiconductor Devices, 3rd ed. (Wiley, New York, 2006). 10.1002/0470068329
11. S. B. Chen, C. H. Lai, A. Chin, J. C. Hsieh, and J. Liu, IEEE Electron Device Lett. EDLEDZ 0741-3106 23, 185 (2002). 10.1109/55.992833 (Pubitemid 34514975)
12. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. JAPIAU 0021-8979 89, 5243 (2001). 10.1063/1.1361065
13. R. Ravindran, K. Gangopadhyay, S. Gangopadhyay, N. Mehta, and N. Biswas, Appl. Phys. Lett. APPLAB 0003-6951 89, 263511 (2006). 10.1063/1.2425010 (Pubitemid 46058081)
14. S. L. Swartz, D. R. White, and L. E. Cross, J. Mater. Sci. JMTSAS 0022-2461 27, 3932 (1992). 10.1007/BF00545478
15. J. C. Maxwell, Treatise on Electricity and Magnetism, 3rd ed. (Oxford University Press, London, 1904).
16. K. W. Wagner, Arch. Elektrotech. (Berlin) AELTA6 0003-9039 2, 371 (1914). 10.1007/BF01657322
17. M. G. El-Shaarawy and W. A. A. Bayoumy, Mater. Chem. Phys. MCHPDR 0254-0584 78, 405 (2003). 10.1016/S0254-0584(02)00201-8 (Pubitemid 35344975)
18. A. Crunteanu, F. Dumas-Bouchiat, C. Champeaux, A. Catherinot, and P. Blondy, Thin Solid Films THSFAP 0040-6090 515, 6324 (2007). 10.1016/j.tsf.2006. 11.179 (Pubitemid 46660927)
19. B. -S. Chiou, IEEE Trans. Compon., Hybrids, Manuf. Technol. ITTEDR 0148-6411 12, 798 (1989). 10.1109/33.49049 (Pubitemid 20664775)
20. H. Kliem and N. Farag, Proceedings of the Conference on Electrical Insulation and Dielectric Phenomena (IEEE, Piscataway, New Jersey, 1997), Vol. 1, p. 11.
21. G. A. Samara and P. S. Peercy, Phys. Rev. B PRBMDO 0163-1829 7, 1131 (1973). 10.1103/PhysRevB.7.1131