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Volumn , Issue , 2007, Pages 217-220

Normally-off SiC-JFET inverter with low- Voltage control and a high-speed drive circuit

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; FIELD EFFECT TRANSISTORS; HIGH SPEED NETWORKS; SILICON CARBIDE; SWITCHING CIRCUITS; THRESHOLD VOLTAGE;

EID: 39749088777     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2007.4294971     Document Type: Conference Paper
Times cited : (25)

References (7)
  • 3
    • 27744440514 scopus 로고    scopus 로고
    • 1200V-Class 4H-SiC RESURF MOSFETs with Low On-Resistances
    • T. Kimoto, H. Kawano and J. Suda, "1200V-Class 4H-SiC RESURF MOSFETs with Low On-Resistances", Proceedings of ISPSD2005, pp.279-282
    • (2005) Proceedings of ISPSD , pp. 279-282
    • Kimoto, T.1    Kawano, H.2    Suda, J.3
  • 4
    • 34247496431 scopus 로고    scopus 로고
    • Low on-resistance in inversion channel IEMOSFET formed on 4H-SiC C-face substrate
    • S. Harada, M. Kato, M. Okamoto, T. Yatsuo, K. Fukuda and K. Arai "Low on-resistance in inversion channel IEMOSFET formed on 4H-SiC C-face substrate", Proceedings of ISPSD2006, pp. 125-128
    • (2006) Proceedings of ISPSD , pp. 125-128
    • Harada, S.1    Kato, M.2    Okamoto, M.3    Yatsuo, T.4    Fukuda, K.5    Arai, K.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.