12 kV 4H-SiC p-IGBTs with record low specific on-resistance

Materials Science Forum

Volumn 600-603, Issue , 2009, Pages 1187-1190

  Zhang, Qingchun ^a   Jonas, Charlotte ^a   Sumakeris, Joe ^a   Agarwal, Anant ^a   Palmour, John ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

High power; High voltage; IGBT; On resistance; P channel; SiC; Surge capability

Indexed keywords

BIAS VOLTAGE; CARRIER LIFETIME; HOLE MOBILITY; HVDC POWER TRANSMISSION; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); MODULATION; SEMICONDUCTOR JUNCTIONS; THRESHOLD VOLTAGE;

BLOCKINGS; CONDUCTIVITY MODULATION; DC CHARACTERISTICS; GATE BIAS; HIGH POWER; HIGH-VOLTAGES; ON-RESISTANCE; P CHANNELS; SPECIFIC-ON-RESISTANCE; SURGE CAPABILITY;

SILICON CARBIDE;

EID: 63849095967     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.600-603.1187     Document Type: Conference Paper

References (4)

1. S. Ryu, S. Krishnaswami, M. O'Loughlin, J. Richmond, A. Agarwal, J. Palmour, and A. Hefner, IEEE Electron Device Lett., 25 (2004), p556-558.
2. A. Agarwal, P. Ivanov, M. Levenshtein, J. Palmour, S. Rumyantsev, ans S. Ryu, Semicond. Sci. Technol. 16 (2001), 260-262.
3. th ISPSD (2007), p281-284.
4. M. Das, Q. Zhang, R. Callanan, C. Capell, J. Clayton, M. Donofrio, Haney, F. Husna, C. Jonas, J. Richmond, and J.J. Sumakeris, to be presented at ICSCRM 2007.