DC performance of high-quantum-efficiency 1.3-μm GaNAsSb/GaAs waveguide photodetector

IEEE Electron Device Letters

Volumn 31, Issue 5, 2010, Pages 449-451

  Xu, Z ^a   Saadsaoud, N ^b   Zegaoui, M ^b   Loke, W K ^a   Tan, K H ^a   Wicaksono, S ^a   Yoon, S F ^a   Legrand, C ^b   Decoster, D ^b   Chazelas, J ^c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b INSTITUT D ELECTRONIQUE   (France)

^c THALES   (France)

Author keywords

Dilute nitride; GaNAsSb; Responsivity; Waveguide photodetector (WGPD)

Indexed keywords

ALGAAS/GAAS; CLADDING LAYER; DC PERFORMANCE; DILUTE NITRIDES; EPILAYER STRUCTURES; INTERNAL QUANTUM EFFICIENCY; OPTICAL POWER; RESPONSIVITY; REVERSE BIAS VOLTAGE; REVERSE BREAKDOWN VOLTAGE; WAVEGUIDE PHOTODETECTORS;

NITRIDES; OPTOELECTRONIC DEVICES; PHOTODETECTORS; WAVEGUIDES;

QUANTUM EFFICIENCY;

EID: 77951877432     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2041742     Document Type: Article

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