Quick planarisation based on hydrogen silsesquioxane (HSQ) for deep etched InP based structures

Electronics Letters

Volumn 43, Issue 22, 2007, Pages 1234-1236

  Zegaoui, M ^a   Harari, J ^a   Choueib, N ^a   Magnin, V ^a   Decoster, D ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DRY ETCHING; ELECTRODES; INDIUM PHOSPHIDE; PASSIVATION; SEMICONDUCTOR DEVICES; SILICA;

DEEP ETCHED; DEVICE INTEGRATION; HYDROGEN SILSESQUIOXANE (HSQ); RESIST FILMS;

HYDROGEN;

EID: 35448961114     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20071889     Document Type: Article

References (6)

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2. Demir, H.V., Zheng, J.F., Sabnis, V.A., Fidaner, O., Hansberg, J., Harris, J.S., and Miller, D.A.B.: ' Self-aligning planarization and passivation, for integration applications in III-V semiconductor devices ', IEEE Trans. Semicond. Manuf., 2005, 18, 1, p. 182-189 10.1109/TSM.2004.841834 0894-6507
3. Moyer, E.S., Chung, K., Spaulding, M., Deis, T., Boisvert, R., Saha, C., and Bremmer, J.: ' Ultra low dielectric constant silsesquioxane based resin ', IEEE Int. Conf. on Interconnect Technology, San Francisco, California, USA, May, 1999, p. 196-197
4. 2O plasma in ashing process ', Proc. IEEE Int. Interconnect Technology Conf., San Francisco, California, USA, June, 1998, p. 48-50
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6. Lauvernier, D., Garidel, S., Legrand, C., and Vilcot, J.F.: ' Realisation of sub-micron patterns on GaAs using a HSQ etching mask ', Microelectron. Eng., 2005, 77, n°3-4, p. 210-216 10.1016/j.mee.2004.11.002 0167-9317