Point defects in dilute nitride III-N-As and III-N-P

Physica B: Condensed Matter

Volumn 376-377, Issue 1, 2006, Pages 545-551

  Chen, W M ^a   Buyanova, I A ^a   Tu, C W ^b   Yonezu, H ^c  

^a LINKÖPING UNIVERSITY   (Sweden)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

Defects; Dilute nitrides; Non radiative; ODMR

Indexed keywords

ALLOYS; DEFECTS; MAGNETIC RESONANCE; OPTICAL SWITCHES; OPTOELECTRONIC DEVICES; POINT DEFECTS; SEMICONDUCTING GALLIUM; SILICON; SUBSTRATES;

CARRIER RECOMBINATION; DILUTE NITRIDES; INTERSTITIAL; INTRINSIC DEFECTS; NON-RADIATIVE; ODMR;

NITRIDES;

EID: 33645141991     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2005.12.138     Document Type: Conference Paper

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