1.3-μm GaNAsSb-GaAs UTC-photodetectors for 10-gigabit ethernet links

IEEE Photonics Technology Letters

Volumn 21, Issue 13, 2009, Pages 911-913

  Fedderwitz, S ^a   Stöhr, Andreas ^a   Weiss M ^a   Poloczek, A ^a   Rymanov, V ^a   Patra, A ^a   Jager D ^a   Tan, K H ^b   Yoon, S F ^b   Loke, W K ^b   Wicaksono, S ^b   Ng, T K ^b   Tangdiongga, E ^c  

^a UNIVERSITY OF DUISBURG ESSEN   (Germany)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

1.3 m photodetectors (PDs); Dilute nitride based photodetectors (PDs); Fiberoptic transmission

Indexed keywords

10-GB ETHERNET; 10-GIGABIT ETHERNET; ANTI-REFLECTION; DILUTE-NITRIDE-BASED PHOTODETECTORS (PDS); FIBER-OPTIC TRANSMISSIONS; FIBEROPTIC TRANSMISSION; GAAS; HIGH-SPEED; IEEE 802.3AE; NEAR INFRARED; RESPONSIVITY;

BIT ERROR RATE; ETHERNET; GALLIUM ALLOYS; LOCAL AREA NETWORKS; NITRIDES; OPTOELECTRONIC DEVICES; SEMICONDUCTING GALLIUM;

PHOTODETECTORS;

EID: 67649592498     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2009.2020302     Document Type: Article

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