Electrical characterization of resistive memory in metal-Pr 0.7Ca0.3MnO3 interface: A future non-volatile memory device

Proceedings - 2009 10th Non-Volatile Memory Technology Symposium, NVMTS 2009

Volumn , Issue , 2009, Pages 28-47

  Das, N ^a   Xue, Y Y ^a   Wang, Y Q ^a   Chu, C W ^a,b,c  

^a University of Houston   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

Dielectric spectroscopy; Maxwell Wagner relaxation; Mesostructure; O2 vacancy; Perovskite; Point defects; Resistive memory; Transition metal oxide

Indexed keywords

MAXWELL-WAGNER RELAXATION; MESOSTRUCTURE; MESOSTRUCTURES; O2- VACANCY; RESISTIVE MEMORY; TRANSITION-METAL OXIDES;

ATOMIC FORCE MICROSCOPY; CALCIUM; DEFECTS; DIELECTRIC DEVICES; DIELECTRIC SPECTROSCOPY; MANGANESE OXIDE; MAXWELL EQUATIONS; OXIDE MINERALS; PEROVSKITE; POINT DEFECTS; SILVER; SOLVENTS; TRANSITION METALS;

TRANSITION METAL COMPOUNDS;

EID: 77951691109     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NVMT.2009.5429779     Document Type: Conference Paper

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