-
1
-
-
1342346714
-
A high-speed silicon optical modulator based on a metal-oxide semiconductor capacitor
-
A. S. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, and M. Paniccia, "A high-speed silicon optical modulator based on a metal-oxide semiconductor capacitor," Nature 427, 615--618 (2004).
-
(2004)
Nature
, vol.427
, pp. 615-618
-
-
Liu, A.S.1
Jones, R.2
Liao, L.3
Samara-Rubio, D.4
Rubin, D.5
Cohen, O.6
Nicolaescu, R.7
Paniccia, M.8
-
2
-
-
33750738878
-
Optical modulation by carrier depletion in a silicon PIN diode
-
D. Marris-Morini, X. Le Roux, L. Vivien, E. Cassan, D. Pascal, M. Halbwax, S. Maine, S. Laval, J. M. Fedeli, and J.F. Damlencourt, "Optical modulation by carrier depletion in a silicon PIN diode," Opt. Express 14, 10838-10843 (2006).
-
(2006)
Opt. Express
, vol.14
, pp. 10838-10843
-
-
Marris-Morini, D.1
Le Roux, X.2
Vivien, L.3
Cassan, E.4
Pascal, D.5
Halbwax, M.6
Maine, S.7
Laval, S.8
Fedeli, J.M.9
Damlencourt, J.F.10
-
3
-
-
27944471365
-
-
Appl. Phys. Lett, 221105-1-3
-
Y. Q. Jiang, W. Jiang, L. L. Gu, X. N. Chen, and R. T. Chen, "80-micron interaction length silicon photonic crystal waveguide modulator," Appl. Phys. Lett. 87, 221105-1-3 (2005).
-
(2005)
80-micron interaction length silicon photonic crystal waveguide modulator
, vol.87
-
-
Jiang, Y.Q.1
Jiang, W.2
Gu, L.L.3
Chen, X.N.4
Chen, R.T.5
-
4
-
-
19744378261
-
Micrometre-scale silicon electrooptic modulator
-
Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, "Micrometre-scale silicon electrooptic modulator," Nature 435, 325-327 (2005).
-
(2005)
Nature
, vol.435
, pp. 325-327
-
-
Xu, Q.1
Schmidt, B.2
Pradhan, S.3
Lipson, M.4
-
5
-
-
33646574983
-
Strained silicon as a new electro-optical material
-
R. S. Jacobsen, K. N. Andersen, P. I. Borel, J. Page-Pedersen, L. H. Frandsen, O. Hansen, M. Kristensen, A. V. Lavrinenko, G. Moulin, H. Ou, C. Peucheret, B. Zsidri, and A. Bjarklev, "Strained silicon as a new electro-optical material," Nature 441, 199-202 (2006).
-
(2006)
Nature
, vol.441
, pp. 199-202
-
-
Jacobsen, R.S.1
Andersen, K.N.2
Borel, P.I.3
Page-Pedersen, J.4
Frandsen, L.H.5
Hansen, O.6
Kristensen, M.7
Lavrinenko, A.V.8
Moulin, G.9
Ou, H.10
Peucheret, C.11
Zsidri, B.12
Bjarklev, A.13
-
6
-
-
34247890192
-
Optical modulator on silicon employing germanium quantum wells
-
J. E. Roth , O. Fidaner , R. K. Schaevitz , Y.-H. Kuo , Th. I. Kamins, J. S. Harris, Jr., and D. A. B. Miller, "Optical modulator on silicon employing germanium quantum wells," Opt. Express 15, 5851-5859 (2007).
-
(2007)
Opt. Express
, vol.15
, pp. 5851-5859
-
-
Roth, J.E.1
Fidaner, O.2
Schaevitz, R.K.3
Kuo, Y.-H.4
Kamins, T.I.5
Harris Jr., J.S.6
Miller, D.A.B.7
-
7
-
-
46349093650
-
Waveguideintegrated, ultralow-energy GeSi electro-absorption modulators
-
J. Liu, M. Beals, A. Pomerene, S. Bernardis, R. Sun, J. Cheng, L. C. Kimerling and J. Michel, "Waveguideintegrated, ultralow-energy GeSi electro-absorption modulators," Nature Photonics 2, 433-437 (2008).
-
(2008)
Nature Photonics
, vol.2
, pp. 433-437
-
-
Liu, J.1
Beals, M.2
Pomerene, A.3
Bernardis, S.4
Sun, R.5
Cheng, J.6
Kimerling, L.C.7
Michel, J.8
-
8
-
-
50049129656
-
Integration of hybrid silicon lasers and electroabsorption modulators
-
M. N. Sysak, J. O. Anthes, J. E. Bowers, O. Raday, and R. Jones, "Integration of hybrid silicon lasers and electroabsorption modulators," Opt. Express, 16, 12478-12486 (2008).
-
(2008)
Opt. Express
, vol.16
, pp. 12478-12486
-
-
Sysak, M.N.1
Anthes, J.O.2
Bowers, J.E.3
Raday, O.4
Jones, R.5
-
9
-
-
33646947270
-
Very-Low-Driving- Voltage Electroabsorption Modulators Operating at 40Gb/s
-
H. Fukano, T. Yamanaka, M. Tamura, and Y. Kondo, "Very-Low-Driving- Voltage Electroabsorption Modulators Operating at 40Gb/s," IEEE J. Lightwave Technol. 24, 2219-2224 (2006).
-
(2006)
IEEE J. Lightwave Technol
, vol.24
, pp. 2219-2224
-
-
Fukano, H.1
Yamanaka, T.2
Tamura, M.3
Kondo, Y.4
-
10
-
-
85008010129
-
A Hybrid Silicon-AlGaInAs Phase Modulator
-
H.-W. Chen, Y.-H. Kuo, and J. E. Bowers, "A Hybrid Silicon-AlGaInAs Phase Modulator," IEEE Photon. Technol. Lett., 20(23), 1920-1922 (2008)
-
(2008)
IEEE Photon. Technol. Lett
, vol.20
, Issue.23
, pp. 1920-1922
-
-
Chen, H.-W.1
Kuo, Y.-H.2
Bowers, J.E.3
-
11
-
-
33646704468
-
Variational calculations on a quantum well in an electric field
-
G. Bastard, E. E. Mendez, L. L. Chang, and L. Esaki, "Variational calculations on a quantum well in an electric field," Phys. Rev. B 28(6), 3240-3245 (1983)
-
(1983)
Phys. Rev. B
, vol.28
, Issue.6
, pp. 3240-3245
-
-
Bastard, G.1
Mendez, E.E.2
Chang, L.L.3
Esaki, L.4
-
12
-
-
0024018238
-
Analysis of depletion edge translation lightwave modulators
-
J.G. Mendoza-Alvarez, L. A. Coldren, A. Alping, R. H. Yan, T. Hausken, K. Lee, and K. Pedrotti, "Analysis of depletion edge translation lightwave modulators," IEEE J. Lightwave Technol. 6(6), 793-808, (1988)
-
(1988)
IEEE J. Lightwave Technol
, vol.6
, Issue.6
, pp. 793-808
-
-
Mendoza-Alvarez, J.G.1
Coldren, L.A.2
Alping, A.3
Yan, R.H.4
Hausken, T.5
Lee, K.6
Pedrotti, K.7
-
13
-
-
0026692511
-
InP/GaInAsP guided-wave phase modulators based on carrier-induced effects: Theory and experiment
-
J. Vinchant, J. A. Cavailles, M. Erman, P. Jarry and M. Renaud, "InP/GaInAsP guided-wave phase modulators based on carrier-induced effects: Theory and experiment," IEEE J. Lightwave Technol. 10(1), 63-70 (1992)
-
(1992)
IEEE J. Lightwave Technol
, vol.10
, Issue.1
, pp. 63-70
-
-
Vinchant, J.1
Cavailles, J.A.2
Erman, M.3
Jarry, P.4
Renaud, M.5
-
14
-
-
49849089411
-
-
D. Liang and J. E. Bowers, Highly efficient vertical outgassing channels for low-temperature InP-to-silicon direct wafer bonding on the silicon-on-insulator substrate, J. Vac. Soci. Tech. B 26(4), 1560-1568 (2008)
-
D. Liang and J. E. Bowers, "Highly efficient vertical outgassing channels for low-temperature InP-to-silicon direct wafer bonding on the silicon-on-insulator substrate," J. Vac. Soci. Tech. B 26(4), 1560-1568 (2008)
-
-
-
-
15
-
-
35348962132
-
A hybrid AlGaInAs-Silicon evanescent preamplifier and photodetector
-
H. Park, Y.-H Kuo, A. W. Fang, R. Jones, O. Cohen, M. Paniccia and J. E. Bowers, "A hybrid AlGaInAs-Silicon evanescent preamplifier and photodetector," Opt. Express., 15(21), 230-232 (2007)
-
(2007)
Opt. Express
, vol.15
, Issue.21
, pp. 230-232
-
-
Park, H.1
Kuo, Y.-H.2
Fang, A.W.3
Jones, R.4
Cohen, O.5
Paniccia, M.6
Bowers, J.E.7
-
16
-
-
0028518461
-
Experimental analysis of transmission line parameters in high-speed GaAs digital circuit interconnects
-
K. Kiziloglu, N. Dagli, G. L. Matthaei, and S. I. Long, "Experimental analysis of transmission line parameters in high-speed GaAs digital circuit interconnects," IEEE Trans. Microwave Theory Tech. 42(10), 1918-1924 (1994)
-
(1994)
IEEE Trans. Microwave Theory Tech
, vol.42
, Issue.10
, pp. 1918-1924
-
-
Kiziloglu, K.1
Dagli, N.2
Matthaei, G.L.3
Long, S.I.4
-
17
-
-
0032682361
-
Ultrahigh-speed traveling-wave electroabsorption modulator-design and analysis
-
G. L. Li, C. K. Sun, S. A. Pappert, W. X. Chen, and P. K. L. Yu, "Ultrahigh-speed traveling-wave electroabsorption modulator-design and analysis," IEEE Trans. Microwave Theory Tech., vol. 47, 1177-1183 (1999).
-
(1999)
IEEE Trans. Microwave Theory Tech
, vol.47
, pp. 1177-1183
-
-
Li, G.L.1
Sun, C.K.2
Pappert, S.A.3
Chen, W.X.4
Yu, P.K.L.5
-
18
-
-
14544284017
-
Novel T-rail electrodes for substrate removed lowvoltage high-speed GaAs/AlGaAs electrooptic modulators
-
J. Shin, C. Ozturk, S. R. Sakamoto, Y. J. Chiu, and N. Dagli, "Novel T-rail electrodes for substrate removed lowvoltage high-speed GaAs/AlGaAs electrooptic modulators," IEEE Trans. Microwave Theory Tech. 53(2), 636-643 (2005)
-
(2005)
IEEE Trans. Microwave Theory Tech
, vol.53
, Issue.2
, pp. 636-643
-
-
Shin, J.1
Ozturk, C.2
Sakamoto, S.R.3
Chiu, Y.J.4
Dagli, N.5
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