Direct recognition of non-radiative recombination centers in semi-insulating LEC InP:Fe using double excitation photoluminescence

Journal of Luminescence

Volumn 128, Issue 2, 2008, Pages 232-238

  Dogan S ^a   Tuzemen S ^a  

^a ATATÜRK UNIVERSITY   (Turkey)

Author keywords

InP:Fe; Non radiative recombination; PL; Undoped InP

Indexed keywords

DOPING (ADDITIVES); ENERGY GAP; INDIUM PHOSPHIDE; IRON; LIGHTING; PHOTOIONIZATION; PHOTOLUMINESCENCE;

DOUBLE EXCITATION PHOTOLUMINESCENCE; NON RADIATIVE RECOMBINATION;

LIQUID CRYSTALS;

EID: 35248848275     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2007.07.015     Document Type: Article

References (31)

1. Casey H.C., and Panish M.B. Heterostructure Lasers (1978), Academic Press, New York
2. T.P. Pearsall, Properties, processing and applications of indium phosphide, in: New EMIS Proceedings Series, 2000.
3. Kamimura K., Suzuki T., and Kunioka A. Appl. Phys. Lett. 38 (1981) 259
4. Onabe K. Jpn. J. Appl. Phys. 21 (1982) 729
5. Meliani C., Post G., Rondeau G., Decobert J., Mouzannar W., Dutisseuil E., and Lefevre R. Electron. Lett. 38 (2002) 1175
6. Wang H., and Ng G.I. IEEE Trans. Electron Devices 48 (2001) 1492
7. Carnera A., Gasparotto A., Tromby M., Caldironi M., Pellegrino S., Vidimari F., Bocchi C., and Frigeri C. J. Appl. Phys. 76 (1994) 9
8. Cantelli R., Cordero F., Palumbo O., Cannelli G., Trequattrini F., Guadalupi G.M., and Molinas B. Phys. Rev. B 62 (2000) 1828
9. Ewels C.P., Öberg S., Jones R., Pajot B., and Briddon P.R. Semicond. Sci. Technol. 11 (1996) 502
10. Dong H.W., Zhao Y.W., Lu H.P., Jiao J.H., Zhao J.Q., and Lin L.Y. Semicond. Sci. Technol. 17 (2002) 570
11. Seidl A., Mosel F., Friedrich J., Kretzer U., and Muller G. Mater. Sci. Eng. B 21 (1993) 321
12. Alt H., Treichler T., and Völkl J. Appl. Phys. Lett. 59 (1991) 3621
13. Fornari R., and Kumar J. Appl. Phys. Lett. 56 (1990) 638
14. Mosel F., Seidl A., Hofmann D., and Muller G. Appl. Surf. Sci. 50 (1991) 364
15. Söderström D., Marcinkevicus S., Karlsson S., and Lourdudoss S. Appl. Phys. Lett. 70 (1997) 3374
16. K.W. Böer, Survey of Semiconductor Physics, Van Nostrand Reinhold, New York, 1990.
17. Doǧan S., Tüzemen S., Gürbulak B., Ateş A., and Yi{dotless}ldi{dotless}ri{dotless}m M. J. Appl. Phys. 85 (1999) 6777
18. Zach F.X. J. Appl. Phys. 75 (1994) 7894
19. Pavesi L., Piazza F., Rudra A., Carlin J.F., and Ilegems M. Phys. Rev. B 44 (1991) 9052
20. Kim C.W., Stringfellow G.B., and Sadwick L.P. J. Crystal Growth 164 (1996) 101
21. Mari B., Hernandez M.A., Navarro F.J., and Fornari R. Nucl. Instr. and Meth. 147 (1999) 175
22. Kim T.S., Lester S.D., and Streetman B.G. J. Appl. Phys. 62 (1987) 1363
23. Oliveira C.E.M., Carvalho M.M.G., Mendonca C.A.C., Miskys C.R., Guadalupi G.M., Battagliarin M., and Bueno M.I.M.S. J. Crystal Growth 186 (1998) 487
24. S. Doǧan, M.Sc. Thesis, Atatürk University, 1998, unpublished.
25. Kaminski P., Pawlowski M., Kozlowski R., Surma B., Dubecky F., Yamada M., and Fukuzawa M. Eur. Phys. J. Appl. Phys. 27 (2004) 171
26. Kaminski P., and Thomas H. Acta Phys. Pol. A 77 (1990) 87
27. Takanohashi T., and Nakajiva K. J. Appl. Phys. 65 (1989) 3933
28. Lucovsky G. Solid State Commun. 3 (1965) 299
29. Valley G.C., McCahon S.W., and Klein M.B. J. Appl. Phys. 64 (1988) 6684
30. Varshni Y.P. Physica 34 (1967) 149
31. Hrivnak L. J. Appl. Phys. 62 (1987) 3228