RF characterization of schottky diodes in 65-nm CMOS

IEEE Transactions on Electron Devices

Volumn 57, Issue 5, 2010, Pages 1063-1068

  Matters Kammerer, Marion K ^a   Tripodi, L ^a   Van Langevelde, R ^a   Cumana, J ^b   Jansen, Rolf H ^b  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

^b RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

Millimeter wave; Schottky diodes; Semiconductor device modeling; Terahertz (THz)

Indexed keywords

ANALYSIS METHOD; EQUIVALENT CIRCUIT MODEL; JUNCTION CAPACITANCES; JUNCTION DIODE; LINEAR ARRAYS; MEASUREMENT RANGE; PARALLEL DIODES; REVERSE-BIAS; RF BEHAVIOR; RF CHARACTERIZATION; SCHOTTKY DIODES; SCHOTTKY JUNCTIONS; SEMICONDUCTOR DEVICE MODELING; SERIES RESISTANCES; STRAY CAPACITANCES; TERAHERTZ; TERAHERTZ (THZ); TERAHERTZ APPLICATIONS; VOLTAGE RANGES;

APPROXIMATION THEORY; CAPACITANCE; CMOS INTEGRATED CIRCUITS; CUTOFF FREQUENCY; MILLIMETER WAVE DEVICES; MILLIMETER WAVES; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR SWITCHES; TERAHERTZ WAVES;

SEMICONDUCTOR DIODES;

EID: 77951621929     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2043402     Document Type: Article

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