A novel silicon Schottky diode for NLTL applications

IEEE Transactions on Electron Devices

Volumn 52, Issue 7, 2005, Pages 1384-1391

  Mohammed, Falah ^a   Bain, Mike F ^a   Ruddell, Fred H ^a   Linton, David ^a   Gamble, Harold S ^a   Fusco, Vincent F ^a  

^a QUEEN'S UNIVERSITY BELFAST   (United Kingdom)

Author keywords

NLTL; S parameter; Schottky diode; SSOI; VNA

Indexed keywords

CAPACITANCE; ELECTRIC POTENTIAL; INDUCTANCE; ION IMPLANTATION; MOLECULAR BEAM EPITAXY; SCATTERING PARAMETERS; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; SUBSTRATES; TRANSMISSION LINE THEORY;

NONLINEAR TRANSMISSION LINE (NLTL); PARASITIC INDUCTANCE; SCHOTTKY DIODE; SILICON-ON-SILICIDE-ON-INSULATOR (SSOI);

SEMICONDUCTOR DIODES;

EID: 23944491742     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.850684     Document Type: Article

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