Effects of Substrate Resistances on LNA Performance and a Bondpad Structure for Reducing the Effects in a Silicon Bipolar Technology

IEEE Journal of Solid-State Circuits

Volumn 34, Issue 9, 1999, Pages 1339-1344

  Colvin, John T ^a   Bhatia, Saket S ^b   Kenneth, K O ^b  

^a Analog Mixed Signal Design Center   (United States)

^b University of Florida   (United States)

Author keywords

Bonding; Isolation; Microwave bipolar integrated circuits; Microwave bipolar transistor amplifiers; Noise; Packaging; Substrate resistance

Indexed keywords

EID: 0000133648     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/4.782095     Document Type: Article

References (6)

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3. J. Colvin, S. Bhatia, and K. K. O, "A bond-pad structure for reducing effects of substrate resistance on LNA performance in a silicon bipolar technology," in Proc. 1998 IEEE BCTM. Minneapolis, MN, 1998, pp. 109-112.
4. K. K. O, P. Garone, C. Tsai, G. Dawe, B. Scharf, T. Tewksbury, C. Kermarrec, and J. Yasaitis, "A low cost and low power silicon npn bipolar process with NMOS transistors (ADRF) for RF and microwave applications," IEEE Trans. Electron Devices, vol. 42, pp. 1831-1840, Oct. 1995.
5. A. Rofougaran, J. Y.-C. Chang, M. Rofougaran, and A. A. Abid, "A 1 GHz CMOS RF front-end for a direct-conversion wireless receiver," IEEE J. Solid-State Circuits, vol. 31, p. 886, July 1996.
6. M. Pfost, H. Rein, and T. Holzwarth, "Modeling substrate effects in the design of high-speed Si-bipolar IC's," IEEE J. Solid-State Circuits, vol. 31, pp. 1493-1501, Oct. 1996.