Diamond MISFETs fabricated on high quality polycrystalline CVD diamond

Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Volumn , Issue , 2007, Pages 269-272

  Hirama, K ^a   Takayanagi, H ^a   Yamauchi, S ^a   Jingu, Y ^a   Umezawa, H ^b   Kawarada, H ^a  

^a WASEDA UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CUTOFF FREQUENCY; FABRICATION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING DIAMONDS;

DRAIN CURRENTS; GATE LENGTH; POLYCRYSTALLINE DIAMOND;

MISFET DEVICES;

EID: 39749089898     PISSN: 10636854     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISPSD.2007.4294984     Document Type: Conference Paper

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