Low-resistance p+ layer formation into diamond using heavily B ion implantation

Applied Physics Letters

Volumn 89, Issue 1, 2006, Pages

  Tsubouchi, Nobuteru ^a   Ogura, Masahiko ^a   Horino, Yuji ^a   Okushi, Hideyo ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIAMONDS; DOPING (ADDITIVES); ELECTRONIC STRUCTURE; HEAT CONDUCTION; THERMAL EFFECTS; TRANSPORT PROPERTIES;

DIAMOND DEVICES; METALLIC CONDUCTION; SHEET RESISTANCE;

ION IMPLANTATION;

EID: 33745799834     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2219088     Document Type: Article

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