Investigation on production of highly textured Sb doped polycrystalline silicon using solid state Nd: YAG laser for photovoltaic application

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7584, Issue , 2010, Pages

  Palani, I A ^a   Vasa, N J ^a   Singaperumal, M ^a   Okada, T ^b  

^a INDIAN INSTITUTE OF TECHNOLOGY MADRAS   (India)

^b KYUSHU UNIVERSITY   (Japan)

Author keywords

Amorphous silicon (a Si); Crystallization; Laser annealing; Laser doping; Laser texturization; Nd:YAG

Indexed keywords

AMORPHOUS SILICON (A-SI); LASER ANNEALING; LASER DOPING; ND: YAG; TEXTURIZATION;

AMORPHOUS SILICON; CRYSTALLIZATION; DOPING (ADDITIVES); LASER APPLICATIONS; MICROELECTRONICS; MICROSCOPES; NEODYMIUM; POLYCRYSTALLINE MATERIALS; POLYSILICON; SCANNING ELECTRON MICROSCOPY; SURFACE ROUGHNESS; VACUUM EVAPORATION; X RAY DIFFRACTION;

NEODYMIUM LASERS;

EID: 77951615349     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.841105     Document Type: Conference Paper

References (11)

1. Fonrodona .M, Soler. D, Bertomeu. J, Andre. J., " Investigations on doping of amorphous and nanocrystalline silicon films deposited by catalytic chemical vapour deposition", Thin Solid Films, 395,125-129 (2001). (Pubitemid 32935714)
2. Saleh. R, Nickel. N.H.," Effects of doping on structural change and hydrogen bonding in laser crystallized polycrystalline silicon films" Thin solid films, 515, 3847-3853(2007). (Pubitemid 46251401)
3. 3+:YAG laser assisted formation of polycrystalline-Si films", doi:10.1016/j.tsf.2009.12.003(2009)
4. Kerrien. G, Sarnet. T, Debarre. D, Bolmer. J, Hernandez. M, Lavario. C, Semeria. M.N., "Gas immersion Laser doping (GILD) for ultra-shallow junction formation," Thin Solid Films, 453-454,106-109(2004).
5. Slaoui. A, Foulon. F, Struck. R, Siffert. P., "Boron doping of silicon by excimer laser irradiation in a Reactive atmosphere", Appl. Phys. A, 50, 479-484 (1990). (Pubitemid 20685684)
6. Kim.K, Lee.K, Oh.M.S, Park .C.H., Seongil Im," Surface-induced time-dependent instability of ZnO based thin-film transistors" Thin Solid Films, 517, 6345-6348, (2009).
7. Ismail. RA, Hadi. AA," Electrical Characteristics of Si Doped with Sb by Laser Annealing", Turk. J Phys 27,145-152 (2003).
8. Mei, Boyce. JB, Lu. JP, Ho. J, Fulks. RT," Pulsed laser crystallization and doping for thin film transistors", J. Non-Cryst. Solids, 266-269, 1252-1259 (2000).
9. Palani.I.A, Vasa. N.J, Singaperumal.M. Okada.T, "Investigation on Solid diffused Laser Doping(SDLD) of Sb on a- Si and ZnO for functional device ," Proc. COLA 2009, 200 (2009).
10. 3+:YAG laser", Materials Science in Semiconductor Processing, 11, 107-116(2008)
11. Fabijańska. A, Kostrubiec. F, Koszmider. T, Pawlak. R, Tomczyk .M, Walczak. M.," "Thermal changes of the surface tension in selected laser microtechnologies". Proc. of International Conference Microtechnology and Thermal Problems in Electronics, (MicroTherm'2007), 167 (2007).