Electrical characteristics of Si doped with Sb by laser annealing

Turkish Journal of Physics

Volumn 27, Issue 2, 2003, Pages 145-152

  Ismail, Raid A ^a   Hadi, Aseel A ^a  

^a UNIVERSITY OF TECHNOLOGY   (Iraq)

Author keywords

Laser annealing; LID doping; Sb dopants; Silicon devices

Indexed keywords

ANTIMONY; DIFFUSION; ELECTRIC CONDUCTIVITY; LASER BEAM EFFECTS; MELTING; NEODYMIUM LASERS; PULSED LASER APPLICATIONS; SEMICONDUCTOR DOPING;

LASER ANNEALING;

SILICON WAFERS;

EID: 0037244365     PISSN: 13000101     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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