Properties of indium-doped ZnO films prepared in an oxygen-rich plasma

Journal of Electronic Materials

Volumn 36, Issue 9, 2007, Pages 1219-1223

  Li, Hui ^a   Xie, Erqing ^a   Qiao, Min ^a   Pan, Xiaojun ^a   Zhang, Yongzhe ^a  

^a LANZHOU UNIVERSITY   (China)

Author keywords

Indium; Optical properties; ZnO

Indexed keywords

C-AXIS CONSTANT; CRYSTAL QUALITY; ORANGE-GREEN EMISSION; SUBSTRATE TEMPERATURE;

CRYSTAL STRUCTURE; LIGHT EMISSION; MAGNETRON SPUTTERING; PHOTOLUMINESCENCE SPECTROSCOPY; SEMICONDUCTOR DOPING; ZINC OXIDE;

SEMICONDUCTING FILMS;

EID: 34548204915     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-007-0136-2     Document Type: Article

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