Comprehensive study of the doping and injection-level dependence of stoichiometric silicon nitride passivation for silicon solar cells

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2002, Pages 102-105

  Kerr, Mark J ^a   Cuevas, Andres ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; CURRENT DENSITY; ELECTRIC CONDUCTIVITY OF SOLIDS; INTERFACES (MATERIALS); PASSIVATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DOPING; SILICON NITRIDE; SILICON WAFERS; STOICHIOMETRY; THRESHOLD VOLTAGE;

DOPING DENSITY; INJECTION LEVEL DEPENDENCE; N TYPE DOPANTS; OPEN CIRCUIT VOLTAGES; P TYPE DOPANTS;

SILICON SOLAR CELLS;

EID: 0036948462     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

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