Valence-band structure of the ferromagnetic semiconductor GaMnAs studied by spin-dependent resonant tunneling spectroscopy

Physical Review Letters

Volumn 104, Issue 16, 2010, Pages

  Ohya, Shinobu ^a,b   Muneta, Iriya ^a   Hai, Pham Nam ^a   Tanaka, Masaaki ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; DOUBLE BARRIERS; FERROMAGNETIC SEMICONDUCTOR; HETEROSTRUCTURES; QUANTUM WELL; RESONANT LEVELS; SPIN-DEPENDENT RESONANT TUNNELING; TUNNEL MAGNETORESISTANCE;

BAND STRUCTURE; CRYSTALS; ELECTRIC RESISTANCE; FERROMAGNETIC MATERIALS; FERROMAGNETISM; GALLIUM ALLOYS; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE; RESONANT TUNNELING; SCANNING TUNNELING MICROSCOPY; SPECTROSCOPY; WIND TUNNELS;

HETEROJUNCTIONS;

EID: 77951259810     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.104.167204     Document Type: Article

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