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Physical Review Letters

Volumn 100, Issue 4, 2008, Pages

Enhanced tunnel magnetoresistance due to spin dependent quantum well resonance in specific symmetry states of an ultrathin ferromagnetic electrode

(3) Niizeki, Tomohiko a Tezuka, Nobuki a,b Inomata, Koichiro a,b,c

a JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

b TOHOKU UNIVERSITY (Japan)

c NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS VOLTAGE; FILM THICKNESS; IRON; SEMICONDUCTOR QUANTUM WELLS;

EPITAXIAL MAGNETIC TUNNEL JUNCTIONS; FERROMAGNETIC ELECTRODE; QUANTUM WELL RESONANCE;

MAGNETORESISTANCE;

EID: 38849137794 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.100.047207 Document Type: Article

Times cited : (44)

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