Quantum-level control in a III-V-based ferromagnetic-semiconductor heterostructure with a GaMnAs quantum well and double barriers

Applied Physics Letters

Volumn 96, Issue 5, 2010, Pages

  Ohya, Shinobu ^a,b   Muneta, Iriya ^a   Tanaka, Masaaki ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DOUBLE BARRIERS; HETEROSTRUCTURES; QUANTUM LEVELS; QUANTUM WELL; SPIN DEPENDENT TUNNELING; TUNNELING DEVICE;

FERROMAGNETIC MATERIALS; FERROMAGNETISM; GALLIUM ALLOYS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SPIN DYNAMICS; VANADIUM ALLOYS; WIND TUNNELS;

HETEROJUNCTIONS;

EID: 76449088770     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3298358     Document Type: Article

References (10)

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7. S. Ohya, I. Muneta, P. N. Hai, and M. Tanaka (unpublished).
8. We used a wet etching method whose rate was estimated by using the atomic force microscopy and the surface profiler. We checked this etching rate by measuring the resistance of mesa diodes comprising GaMnAs/AlAs/ p+ GaAs (001) with the top GaMnAs layer etched with various etching time, where the resistance became large when it was perfectly etched.
9. There is a small current path through the underlying GaAs:Be layer and the AlAs barrier as indicated by dotted path in Fig., but we neglected this path. We also neglected the resistance of the AlMnAs barrier just beneath the ring-shaped QW electrode, because it is much smaller than that beneath the TOP electrode due to the large difference in area size between the TOP and QW electrodes.
10. C. Ertler and J. Fabian, Phys. Rev. B 0163-1829 75, 195323 (2007). 10.1103/PhysRevB.75.195323