Suppression of leakage current of Ni/Au schottky barrier diode fabricated on AlGaN/GaN heterostructure by oxidation

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 4 B, 2006, Pages 3398-3400

  Lee, Seung Chul ^a   Ha, Min Woo ^a   Lim, Ji Yong ^a   Her, Jin Cherl ^a   Seo, Kwang Seok ^a   Han, Min Koo ^a  

^a Seoul National University   (South Korea)

Author keywords

Breakdown voltage; Ni; Oxidation; Schottky barrier diode

Indexed keywords

ELECTRIC BREAKDOWN; GALLIUM NITRIDE; HETEROJUNCTIONS; NICKEL; OXIDATION; SCHOTTKY BARRIER DIODES; WAVEFORM ANALYSIS;

ALGAN; ANODE BIAS; EDGE TERMINATION; FLOATING METAL RINGS (FMR);

LEAKAGE CURRENTS;

EID: 33646934662     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.3398     Document Type: Article

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